Figure 2 Schematic diagram of the n-type GAA Si NW MOSFET. Discrete distributions of the active As atoms are introduced into the S/D extensions. To mimic metal electrodes, the S/D regions are heavily doped with N d = 5 × 1020 cm−3 (continuously KU55933 doping). The channel region is intrinsic. We simulated 100 samples using 200 different random seeds (each sample needs two random seeds for S/D extensions). Results and discussion As distribution by KMC simulation Figure

3 shows random discrete active As distribution in the Si NW calculated by the KMC simulation. The histogram shows the normal distribution curve, and therefore, 200 seeds are large enough to represent the randomness. The average number of active As atoms in the NW is 27 with the standard deviation of 5. Out of 300 As atoms implanted into the selleck screening library 3-nm-wide Si region, only approximately 10% of As atoms are active in the Si NW. Most of the As atoms are in the oxide (approximately 40 atoms), at the oxide/Si interface (approximately 50),

in As-vacancy (As-V) clusters (approximately 90), and As precipitates (approximately 90) (see Figure 1). As-V clusters and As precipitates are inactive and immobile. They are formed when As concentration exceeds approximately 1020 cm−3 (for As-V clusters) and the solubility limit (for As precipitates) [14, 15]. In Sentaurus, not only As-V clusters but also As-Si interstitial (I) clusters (inactive and immobile) are taken into account, but As precipitates are not. In the present study, therefore, As-Si interstitial clusters in Sentaurus are interpreted as As precipitates. The calculation results show that the As activation ratio decreases with higher As dose because inactive As species (As-V clusters Calpain and As precipitates) are more likely to be formed. In NWs with smaller widths and heights, the As activation is found to be lower because more As atoms are closer to the oxide/Si interface and hence are piled up at the interface. Figure 3 Histogram of the number of active As atoms in the Si NWs. Si NWs (3

nm wide, 3 nm high, and 10 nm long) with 1-nm-thick oxide are implanted with As (0.5 keV, 1 × 1015 cm−2) and annealed at 1,000°C with a hold time of 0 s. Two hundred different random seeds were calculated. NEGF simulation Figure 4 shows the I d-V g characteristics at V d = 0.5 V of 100 devices with different discrete As distributions (gray lines). In the figure, their average value 〈I d〉 (open circles) and the I d of a continuously doping case in the S/D extensions (solid circles) are also shown for comparison. For the continuously doping case, the S/D extensions are uniformly n-doped with a concentration of 3 × 1020 cm−3, which corresponds to the average active As concentration in the Si NWs (see Figure 3). The I-V characteristics of devices uniformly n-doped with 2 × 1020, 2.5× 1020, and 3.