Acknowledgements The authors would like to acknowledge the Nation

Acknowledgements The authors would like to acknowledge the National Science Council of Taiwan for supporting this research under Contract No. MOST 103-2221-E-007 -114 -MY3. The National Nano Device Laboratories is greatly appreciated for its technical support. References 1. Lee CW, PI3K inhibitor Afzalian A, Akhavan ND, Yan R, Ferain I, Colinge JP: Junctionless multigate field-effect transistor. Appl Phys Lett 2009, 94:053511. 10.1063/1.3079411CrossRef learn more 2. Colinge JP, Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Razavi P, O’Neil B, Blake A, White M, Kelleher AM, McCarthy B, Murphy R: Nanowire transistors

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Silva SRP: Improving switching performance of thin-film transistors in disordered silicon. IEEE Electron Device Lett 2008, 29:588.CrossRef 10. Sze SM, Ng K: Physics of Semiconductor Devices. 3rd edition. New York: Wiley; 2007. 11. Synopsys, Inc: Sentaurus Device User Guide. Mountain View: Version I-2013.12; 2013. 12. Ancona MG, Iafrate GJ: Quantum correction to the equation of state of an electron gas in a semiconductor. Phys Rev B 1989, 39:9536. 10.1103/PhysRevB.39.9536CrossRef 13. Trevisoli RD, Doria RT, de Souza M, Pavanello MA: Threshold voltage in junctionless nanowire transistors. Semiconductor Sci Technol 2011, 26:1. Competing interests The authors declare that they have no competing interests. Authors’ contributions YCC and HB handled the experiment and drafted the manuscript. MH made the simulation plot and performed the electrical analysis. NH, JJ, and CS fabricated the samples and carried out the electrical characterization. YCW supervised the work and reviewed the manuscript.

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